Patrice J Barroul

Title: The Innovations of Patrice J Barroul

Introduction

Patrice J Barroul is a notable inventor based in Bois d'Arcy, France. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and capabilities of semiconductor devices.

Latest Patents

One of his latest patents is for a high breakdown voltage double-gate semiconductor device. This innovative device includes a MOS gate and a junction gate, where the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of this double-gate semiconductor device is the sum of the breakdown voltages of both the MOS gate and the junction gate. This design provides improved RF capability and operability at higher power levels compared to conventional transistor devices. Additionally, the double-gate semiconductor device can be fabricated in a higher spatial density configuration, eliminating the need for a common implantation between the MOS gate and the junction gate.

Career Highlights

Patrice J Barroul is currently associated with Acco Semiconductor, Inc., where he continues to innovate in the semiconductor field. His work has been instrumental in advancing the technology used in modern electronic devices.

Collaborations

He has collaborated with notable colleagues such as Denis A Masliah and Alexandre G Bracale, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Patrice J Barroul's contributions to the field of semiconductor technology are significant and impactful. His innovative designs and patents continue to shape the future of electronic devices.