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Fremont, CA, United States of America

Parth Amin

USPTO Granted Patents = 16 (Patent Applications = 8)

Average Co-Inventor Count = 3.1

ph-index = 1

Forward Citations = 1(Granted Patents)

Location History:

Fremont, CA (US) (2020 - 2023)
Livermore, CA (US) (2024)

Company Filing History:

14 out of 4,549

Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Years Active: 2020-2025

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12494255 - Real time ramp rate adjustment for better performance and current consumption tradeoff (2025-12-09),

2. 12482532 - Non-volatile memory with adjustable ramp rate (2025-11-25),

3. 12469567 - Open block detection using current consumption peak during fourth time period of read operation and method of lowering current consumption for non-volatile memory apparatus (2025-11-11),

4. 12462877 - Program pulse duration increase for NAND program failure (2025-11-04),

5. 12437831 - Non-volatile memory with slow voltage ramp compensation (2025-10-07),

6. 12424295 - Evolving bad block detection in non-volatile memory (2025-09-23),

7. 12380960 - Non-volatile memory with faster post-erase defect testing (2025-08-05),

8. 12353275 - Optimized erratic program detection process (2025-07-08),

9. 12334160 - Apparatus and method for detecting neighbor plane erase failures (2025-06-17),

10. 12272417 - Vera detection method to catch erase fail (2025-04-08),

11. 11967388 - Stress test for grown bad blocks (2024-04-23),

12. 11776628 - Systems and methods for adjusting threshold voltage distribution due to semi-circle SGD (2023-10-03),

13. 11581049 - System and methods for programming nonvolatile memory having partial select gate drains (2023-02-14),

14. 11562798 - Programming techniques for memory devices having partial drain-side select gates (2023-01-24),

15. 11545225 - 'Read after erase' method for catching single word line 'slow to erase' signature in nonvolatile memory structures (2023-01-03),

Title: Top Inventor in Fremont, California

Introduction: Hongyuan Zhang is a prominent inventor known for his significant contributions to various fields.

Latest Patents: His recent patents showcase innovative solutions and advancements in technology.

Career Highlights: Throughout his career, Zhang has achieved numerous accolades and recognition for his work.

Collaborations: He has collaborated with various organizations and institutions to further his research and development efforts.

Conclusion: Hongyuan Zhang continues to be a leading figure in innovation, inspiring future generations of inventors.

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