Paolo Mercaldi

Title: Paolo Mercaldi: Innovator in Trench MOS Schottky Barrier Technology

Introduction

Paolo Mercaldi is a notable inventor based in Turin, Italy. He has made significant contributions to the field of semiconductor technology, particularly with his innovative patent related to trench MOS Schottky barrier devices. His work focuses on enhancing the efficiency and manufacturing processes of these devices.

Latest Patents

Mercaldi holds a patent for a "Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof." This invention features a trench MOS Schottky barrier device that utilizes a metal oxide gate dielectric, such as TiSi, lining the trench wall. This design increases the efficiency of the elemental cell and improves depletion in the mesa during reverse bias. The patent also introduces a reduced mask process, where a single layer of titanium or other metal is deposited on an underlying gate oxide layer on the trench walls and directly atop the mesa between adjacent trenches. A common thermal treatment allows the titanium to diffuse into the SiO gate oxide, forming the TiO gate and the TiSi Schottky barrier on the top surface of the mesa.

Career Highlights

Mercaldi is currently employed at International Rectifier Corporation, where he continues to develop innovative solutions in semiconductor technology. His work has been instrumental in advancing the efficiency and manufacturing processes of electronic components.

Collaborations

Throughout his career, Mercaldi has collaborated with talented professionals, including Rossano Carta and Giovanni Richieri. These collaborations have contributed to the successful development of his patented technologies.

Conclusion

Paolo Mercaldi's contributions to trench MOS Schottky barrier technology exemplify his innovative spirit and dedication to advancing semiconductor technology. His patent reflects a significant step forward in improving device efficiency and manufacturing processes.