The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2009
Filed:
Feb. 23, 2007
Carmelo Sanfilippo, Turin, IT;
Rossano Carta, Turin, IT;
Giovanni Richieri, Turin, IT;
Paolo Mercaldi, Turin, IT;
Carmelo Sanfilippo, Turin, IT;
Rossano Carta, Turin, IT;
Giovanni Richieri, Turin, IT;
Paolo Mercaldi, Turin, IT;
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A trench MOS Schottky barrier device has a metal oxide gate dielectric such as TiSi lining the trench wall to increase the efficiency of the elemental cell and to improve depletion in the mesa during reverse bias. A reduced mask process is used in which a single layer of titanium or other metal is deposited on an underlying gate oxide layer on the trench walls and directly atop the mesa between adjacent trenches. A common thermal treatment causes the Ti to diffuse into the SiOgate oxide to form the TiOgate and to form the TiSi Schottky barrier on the top surface of the mesa.