Acireale, Italy

Paolo Badala′

This inventor holds 1 USPTO granted patent. Top assignee: Stmicroelectronics International N.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Paolo Badala′. Retrieved from https://idiyas.com/inventor/paolo-badala-mqeowwbt

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Paolo Badala′: Semiconductor and Power-Diode Innovation.

Introduction

Paolo Badala′ is an inventor associated with Acireale, Italy, and with STMicroelectronics International N.V. His patent work concerns methods for forming reliable electrical contacts in semiconductor components, including high-power diodes.

Latest Patents

Badala′ is credited with 1 patent. His patent, “Method for Creating an Ohmic Contact on a High-Power Electrical Diode,” describes a laser-annealing process for forming an ohmic contact on a semiconductor component.

The method deposits a highly reflective first metal layer on the surface of a semiconductor drift layer, then places a laser-absorbing second metal layer over portions aligned with an electrical contact point. During laser annealing, the second layer heats substantially, helping form the ohmic contact between the electrical contact point and the first metal layer.

Career Highlights

Badala′’s documented patent contribution focuses on semiconductor manufacturing and electrical contact formation. The approach uses the different optical properties of two metal layers to direct laser-generated heat to the desired contact region.

Collaborations

The patent lists Simone Rascuna′ and Gabriele Bellocchi as collaborators. Badala′ is associated with STMicroelectronics International N.V., a company active in semiconductor technology.

Conclusion

Paolo Badala′’s patent describes a targeted laser-annealing technique for forming ohmic contacts in semiconductor devices, with potential relevance to high-power electrical diodes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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