Pao-Chuan Shih

Title: Pao-Chuan Shih: III-N Transistor Structures and Backside Power Delivery

Introduction

Pao-Chuan Shih is an inventor associated with Taichung City, Taiwan, and Massachusetts Institute of Technology. His patent work concerns III-N transistor structures and fabrication methods that incorporate conductive metal on the backside of a device.

Latest Patents

Shih is listed as an inventor on 1 patent: “Transistor Structure and Methods of Forming the Same.” The patent describes an epitaxial design and transistor platform for III-N transistors and chips with a backside conductive or metal layer. This layer can function as a back gate, a field plate, or an electrode for delivering power to devices and circuits, including through a backside power delivery network. The patent also covers methods for preparing and fabricating the described structures and platform.

Career Highlights

Shih’s listed patent work connects semiconductor device design with potential improvements in transistor control and power delivery. The disclosed approach integrates multiple possible functions into a backside metal layer.

Collaborations

The patent lists Tomás A. Palacios and Qingyun Xie among Shih’s coworkers. Their shared work relates to the III-N transistor structure and its fabrication methods.

Conclusion

Pao-Chuan Shih’s patent contribution focuses on a versatile backside metal layer for III-N transistors, with potential roles in device control and power delivery.