The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2026
Filed:
Dec. 06, 2024
Massachusetts Institute of Technology, Cambridge, MA (US);
Tomás A. Palacios, Belmont, MA (US);
Qingyun Xie, Cambridge, MA (US);
John Prakash Niroula, Los Angeles, CA (US);
Pao-Chuan Shih, Taichung City, TW;
Gillian Micale, Boston, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
Provided is an epitaxial design/structure and transistor platform for a III-N transistor/chip incorporating a backside conductive/metal layer. The backside metal may serve several functions in the transistor/chip, including serving as a back gate, a field plate, and an electrode to deliver power to the devices and circuits, for example, as part of a backside power delivery network (BSPDN). Also provided are methods of preparing/fabricating the epitaxial design/structure and transistor platform described herein.