Palash Sarker

Title: Innovations of Palash Sarker in Power Semiconductor Devices

Introduction

Palash Sarker is a notable inventor based in Dallas, TX (US), recognized for his contributions to the field of power semiconductor devices. His innovative work has led to the development of a unique method for fabricating low-leakage Schottky diodes, which are essential components in various electronic applications.

Latest Patents

Palash Sarker holds 1 patent for his invention titled "Low-leakage Schottky diodes and method of making a power semiconductor device." This patent describes a method of fabricating a power semiconductor device that involves forming a bi-layer mask on a semiconductor substrate. The process includes creating a first dielectric layer on the substrate, followed by a second dielectric layer. The layers are through-etched to expose a portion of the substrate, and the first dielectric layer is selectively etched to create an undercut region. Subsequently, a crystalline semiconductor material is epitaxially grown on the exposed substrate, while a polycrystalline semiconductor material is deposited on the second dielectric layer. After the growth process, both the bi-layer mask and the polycrystalline material are removed, resulting in a mesa with a smooth and defect-free sidewall.

Career Highlights

Palash Sarker is affiliated with the University of Illinois, where he continues to advance his research in semiconductor technology. His work has significantly impacted the efficiency and performance of power semiconductor devices, making them more reliable for various applications.

Collaborations

Palash has collaborated with esteemed colleagues such as Kyekyoon Kim and Frank P Kelly, contributing to a rich environment of innovation and research.

Conclusion

Palash Sarker's innovative approach to semiconductor fabrication exemplifies the importance of research and development in advancing technology. His contributions are paving the way for more efficient electronic devices in the future.