Brooklyn, NY, United States of America

P A Montano

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1992.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal1 out of 834,411 
Other
 patents

Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Innovations and Contributions of Inventor P A Montano

Introduction: P A Montano is a notable inventor based in Brooklyn, NY, recognized for his contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method that enhances the understanding of the Fermi level in Gallium Arsenide (GaAs) and similar materials. With a keen eye for detail, Montano has streamlined the process for in-situ determination, benefiting both researchers and industries.

Latest Patents: Montano holds a patent titled "Method for in-situ determination of the Fermi level in GaAs and similar materials." This patent outlines a sophisticated technique utilizing photoreflectance to measure the Fermi level (V.sub.F) at surfaces or interfaces of GaAs. The method involves directing a probe beam of monochromatic light and a modulated pump beam onto the sample, enabling the calculation of the barrier height (V.sub.m) through the reflected light. This approach allows for the precise quantification of V.sub.F as temperature-induced changes in the surface voltage effects (V.sub.S) are manipulated during experiments.

Career Highlights: Throughout his career, P A Montano has made significant strides in the world of semiconductor research. His dedication to enhancing measurement techniques has positioned him as a valuable contributor to the field. The impact of his work is evident not only in the patents he holds but also in the advancements made in semiconductor applications.

Collaborations: Montano has collaborated with esteemed colleagues such as Fred H Pollak and J M Woodall, contributing to a rich exchange of ideas and fostering innovation in their research endeavors. These collaborations have enhanced the depth of their collective research, leading to breakthroughs in understanding semiconductor materials.

Conclusion: P A Montano's innovative methods and collaborations highlight his commitment to advancing semiconductor technology. His patent on determining the Fermi level in GaAs reflects the profound influence that one inventor can have on the field. As research continues to evolve, the contributions of inventors like Montano remain crucial in shaping the future of technology.

Profile summary based on public USPTO records.
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