The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 1992
Filed:
Aug. 03, 1990
Other;
Abstract
A method for in-situ determination by photoreflectance of the Fermi level (V.sub.F) at the surfaces or interfaces of GaAs and related materials, in which a probe beam of monochromatic light and a modulated pump beam from a pump source are directed onto a sample, and the measured barrier height V.sub.m =V.sub.F -V.sub.S is obtained from the information in the reflected light, where V.sub.S represents the surface voltage effects on the sample by the photoreflectance, whereby V.sub.m approaches V.sub.F as V.sub.S approaches zero during repeated tests in which a parameter such as temperature affecting the numerical value of V.sub.S is changed until there is flattening of the curve illlustrating V.sub.m as a function of the parameter.