This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 1992.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1992
Title: The Innovations of J M Woodall: Pioneering Methods in Semiconductors
Introduction
J M Woodall, an accomplished inventor based in Bedford, NY, has made significant contributions to the field of semiconductor technology. With a focus on enhancing the understanding of Fermi levels in Gallium Arsenide (GaAs) and related materials, Woodall's innovative methods have implications for both research and practical applications in electronics.
Latest Patents
J M Woodall holds a patent for a method entitled "Method for in-situ determination of the Fermi level in GaAs and similar". This patent presents a technique for determining the Fermi level (V.sub.F) at the surfaces or interfaces of GaAs through photoreflectance. By utilizing a probe beam of monochromatic light alongside a modulated pump beam directed at the sample, this method allows for the measurement of barrier height (V.sub.m) and illustrates how V.sub.m approaches V.sub.F as the surface voltage effects (V.sub.S) diminish during variation of parameters such as temperature.
Career Highlights
Throughout his career, J M Woodall has remained dedicated to advancing semiconductor technology. He has honed his skills and expertise, leading him to develop innovative methods that facilitate the in-situ measurement of critical semiconductor properties. His contributions not only extend the boundaries of what is possible within the field, but they also serve as foundational knowledge for ongoing research and development.
Collaborations
Working alongside noted colleagues Fred H Pollak and P A Montano, J M Woodall has engaged in collaborative efforts that further enhance his research output. Together, they have pushed the envelope of semiconductor physics, developing methodologies that improve the accuracy of measurements in semiconductor materials.
Conclusion
J M Woodall's work exemplifies the essence of innovation in the semiconductor sector. His patented method for determining Fermi levels in GaAs provides essential insights that can significantly impact both academic research and industrial applications. His collaborations with esteemed colleagues further underscore the importance of teamwork in advancing scientific understanding and technological innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile