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For the Inventor, By the Inventor

Altdorf, Germany

Otto M Wagner

USPTO Granted Patents = 18

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 193(Granted Patents)


Location History:

  • Aldtorf, DE (2009)
  • Altdorf, DE (1989 - 2010)

Company Filing History:

goldMedal18 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 1989-2010

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18 patents (USPTO):
1. 7813163 - Single-ended read and differential write scheme (2010-10-12),
2. 7755394 - Circuit combining level shift function with gated reset (2010-07-13),
3. 7675794 - Design structure for improving performance of SRAM cells, SRAM cell, SRAM array, and write circuit (2010-03-09),
4. 7626851 - Method to improve performance of SRAM cells, SRAM cell, SRAM array, and write circuit (2009-12-01),
5. 7535750 - Asymmetrical random access memory cell, and a memory comprising asymmetrical memory cells (2009-05-19),
6. 7495949 - Asymmetrical random access memory cell, memory comprising asymmetrical memory cells and method to operate such a memory (2009-02-24),
7. 7289370 - Methods and apparatus for accessing memory (2007-10-30),
8. 7084673 - Output driver with pulse to static converter (2006-08-01),
9. 6958943 - Programmable sense amplifier timing generator (2005-10-25),
10. 6930902 - Device for storing information and a method for partial write and restore (2005-08-16),
11. 6496398 - Content addressable memory (2002-12-17),
12. 5761147 - Virtual two-port memory structure with fast write-thru operation (1998-06-02),
13. 5162264 - Integrated circuit package (1992-11-10),
14. 5016087 - Integrated circuit package (1991-05-14),
15. 4967104 - Circuit for increasing the output impedance of an amplifier (1990-10-30),

Title: Otto M Wagner: Innovator in Memory Cell Technology

Introduction

Otto M Wagner is a distinguished inventor based in Altdorf, Germany. He has made significant contributions to the field of memory cell technology, holding a total of 18 patents. His innovative approaches have paved the way for advancements in static memory cell design and functionality.

Latest Patents

Wagner's latest patents include a method for reading and writing static memory cells. This method involves a single-ended read and differential write scheme, where only one of the two pass-devices is selected during read operations, while both are selected for writing. Additionally, he has developed a circuit that combines a level shift function with a gated reset, allowing for simple logic functions with inputs from a lower voltage and output at a higher voltage.

Career Highlights

Wagner has had a notable career at International Business Machines Corporation (IBM), where he has been instrumental in developing cutting-edge technologies. His work has not only enhanced the performance of memory cells but has also contributed to the overall efficiency of electronic devices.

Collaborations

Throughout his career, Wagner has collaborated with esteemed colleagues such as Helmut Schettler and Thomas Ludwig. These partnerships have fostered a creative environment that has led to numerous innovations in the field.

Conclusion

Otto M Wagner's contributions to memory cell technology exemplify the spirit of innovation. His patents and collaborative efforts continue to influence the industry, showcasing the importance of creativity and teamwork in technological advancement.

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