Kitaibaraki, Japan

Osamu Kanou

This inventor holds 1 USPTO granted patent. Top assignee: Nippon Mining Co., Ltd.. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Osamu Kanou. Retrieved from https://idiyas.com/inventor/osamu-kanou-00k2vm7g

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 36(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Osamu Kanou: Innovator in Thin Film Deposition Technology

Introduction

Osamu Kanou is a notable inventor based in Kitaibaraki, Japan. He has made significant contributions to the field of thin film deposition technology. His innovative approach has led to the development of a unique system that addresses contamination issues in vapor growth processes.

Latest Patents

Kanou holds a patent for a thin film deposition system. This system is designed to prevent contamination of devices and the formation of particles in the deposited thin film. The anti-contamination means includes several options, such as an electrolytic copper foil with a fine-grained thin layer of copper or copper oxide, a corrugated metal foil, and a metal foil with irregularities formed by embossing.

Career Highlights

Kanou has been associated with Nippon Mining Co., Ltd., where he has applied his expertise in thin film technology. His work has been instrumental in advancing the efficiency and reliability of thin film deposition processes.

Collaborations

He has collaborated with notable colleagues, including Susumi Sawada and Hironori Wada, to further enhance the development of innovative technologies in their field.

Conclusion

Osamu Kanou's contributions to thin film deposition technology exemplify the impact of innovative thinking in addressing complex challenges. His work continues to influence advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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