Butterworth, Malaysia

Oi Fong Chin

This inventor holds 2 USPTO granted patents. Top assignee: Intel Corporation. Active years: 2006-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Oi Fong Chin. Retrieved from https://idiyas.com/inventor/oi-fong-chin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 24(Granted Patents)


Company Filing History:


Years Active: 2006-2007

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2 patents (USPTO):Explore Patents

Title: Oi Fong Chin: Innovator in Substrate Singulation Technology

Introduction

Oi Fong Chin is a notable inventor based in Butterworth, Malaysia. He has made significant contributions to the field of substrate singulation technology. With a total of 2 patents, his work focuses on methods and apparatus for separating dice from a substrate.

Latest Patents

Oi Fong Chin's latest patents include an "Apparatus for Controlled Fracture Substrate Singulation" and "Controlled Fracture Substrate Singulation." The first patent describes an apparatus and a system for effectively separating dice from a substrate. The second patent outlines methods and apparatus for achieving the same goal, emphasizing controlled fracture techniques.

Career Highlights

Oi Fong Chin is currently employed at Intel Corporation, where he continues to innovate and develop new technologies. His work at Intel has positioned him as a key player in the advancement of semiconductor manufacturing processes.

Collaborations

Oi Fong Chin has collaborated with notable coworkers, including Yew Wee Cheong and Weng Khoon Mong. These collaborations have further enhanced his contributions to the field.

Conclusion

Oi Fong Chin's innovative work in substrate singulation technology has made a significant impact in the semiconductor industry. His patents reflect his commitment to advancing manufacturing processes and improving efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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