Hwaseong, South Korea

Oh-Hwan Kweon

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Oh-Hwan Kweon. Retrieved from https://idiyas.com/inventor/oh-hwan-kweon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 16.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Oh-Hwan Kweon: Innovator in Photoresist Stripper Technology

Introduction

Oh-Hwan Kweon is a notable inventor based in Hwaseong, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of compositions for photoresist strippers.

Latest Patents

Kweon holds a patent for a "Composition for photoresist stripper and method of fabricating thin film transistor array substrate." This invention provides a composition that includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor. This innovative approach enhances the fabrication process of thin film transistor array substrates.

Career Highlights

Kweon is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of technology. His work has been instrumental in advancing the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

He has collaborated with esteemed colleagues such as Suk-Il Yoon and Young-Joo Choi, contributing to a dynamic and innovative work environment.

Conclusion

Oh-Hwan Kweon's contributions to the field of semiconductor technology through his innovative patent demonstrate his commitment to advancing the industry. His work at Samsung Electronics Co., Ltd. continues to influence the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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