Higashiyamato, Japan

Nozomi Horino


Average Co-Inventor Count = 6.1

ph-index = 5

Forward Citations = 63(Granted Patents)


Location History:

  • Higashiyamato, JP (1988 - 1996)
  • Tokyo, JP (2000)

Company Filing History:


Years Active: 1988-2000

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6 patents (USPTO):Explore Patents

Title: Nozomi Horino: Innovator in Semiconductor Technology

Introduction

Nozomi Horino is a prominent inventor based in Higashiyamato, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

One of Horino's latest patents is a semiconductor gate array device. This invention aims to present a basic cell of a master slice type LSI that features high memory density and high-speed logic circuitry. The basic cell is composed of pairs of PMOS and NMOS transistors, along with strategically placed contact holes. This design allows for improved performance in memory cycles. Another notable patent is a method of making a semiconductor memory device. This device includes wiring formed next to word lines to prevent breakage or deformation, ensuring consistent processing conditions across the memory cell arrays.

Career Highlights

Horino has worked with notable companies such as Hitachi, Ltd. and Hatachi Ltd. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Horino has collaborated with talented individuals, including Hisao Katto and June Sugiura. These partnerships have fostered a creative environment that has led to groundbreaking advancements in the field.

Conclusion

Nozomi Horino's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future innovations.

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