The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 1988
Filed:
Oct. 30, 1986
Akihiro Tomozawa, Hinode, JP;
Yoku Kaino, Sayama, JP;
Shigeru Shimada, Houya, JP;
Nozomi Horino, Higashiyamato, JP;
Yoshiaki Yoshiura, Tanashi, JP;
Osamu Tsuchiya, Koganei, JP;
Shozo Hosoda, Tachikawa, JP;
Hatachi, Ltd, Tokyo, JP;
Hitachi Microcomputer Engineering Ltd., Tokyo, JP;
Abstract
Herein disclosed is a process of fabricating a semiconductor integrated circuit device, in which there is formed between a conductive layer prepared by covering a polycrystalline silicon layer with either a layer containing a refractory metal of high melting point, i.e., a refractory metal layer or a silicide layer of the refractory metal and a first insulating film made of phosphosilicate glass flowing over said conductive layer containing the refractory metal, a second insulating film preventing the layer containing a refractory metal from peeling from the polycrystalline silicon layer by the glass flow. The second insulating film is formed by deposition to have a thickness not smaller than a predetermined value.