Noriyuki Ohta

Title: Noriyuki Ohta: Innovator in Nonvolatile Semiconductor Memory

Introduction

Noriyuki Ohta is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor memory technology. With a total of 11 patents to his name, Ohta's work has had a lasting impact on the industry.

Latest Patents

Ohta's latest patents include advancements in nonvolatile semiconductor memory. One notable invention describes a nonvolatile semiconductor memory that features a cell array arranged with erasable and programmable memory cell transistors. This design includes word lines, digit lines, and source lines, all working together to facilitate an efficient erase operation. The memory erases data by applying a source voltage to the memory cell transistors, ensuring reliable performance.

Another significant patent focuses on the structure of split gate transistors used in non-volatile memory. This invention details a memory cell transistor design that separates the source and drain regions, creating a channel region that enhances memory functionality. The innovative structure includes a control gate electrode and a floating gate electrode, which work in tandem to improve memory efficiency.

Career Highlights

Throughout his career, Noriyuki Ohta has worked with notable companies such as Sankyo Company, Limited and NEC Corporation. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to groundbreaking innovations.

Collaborations

Ohta has collaborated with esteemed colleagues, including Keisuke Murayama and Susumu Higashida. These partnerships have fostered a creative environment that has led to the development of advanced technologies in the semiconductor field.

Conclusion

Noriyuki Ohta's contributions to nonvolatile semiconductor memory have established him as a key figure in the industry. His innovative patents and collaborations continue to influence the future of semiconductor technology.