Norio Magome

Title: Norio Magome: Innovator in Semiconductor Technology

Introduction

Norio Magome is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Norio Magome holds a patent for a semiconductor device. This device features a semiconductor substrate of a first conductivity type. It includes first to third high-voltage insulated-gate field effect transistors formed on the principal surface of the semiconductor substrate. The design incorporates a first device isolation insulating film that isolates the first and second high-voltage insulated-gate field effect transistors from each other. Additionally, a second device isolation insulating film isolates the first and third high-voltage insulated-gate field effect transistors. The device also contains a first impurity diffusion layer and a second impurity diffusion layer of the first conductivity type, both formed below their respective device isolation insulating films. This innovative design is aimed at improving the functionality of semiconductor devices.

Career Highlights

Norio Magome is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to focus on advancing semiconductor technologies. With a patent count of 1 patent, he has established himself as a key player in this field.

Collaborations

Norio has collaborated with notable coworkers, including Toshifumi Minami and Tomoaki Hatano. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Norio Magome's contributions to semiconductor technology exemplify the innovative spirit of modern inventors. His work continues to influence the industry and pave the way for future advancements.