The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Jan. 28, 2009
Norio Magome, Kawasaki, JP;
Toshifumi Minami, Yokohama, JP;
Tomoaki Hatano, Yokohama, JP;
Norihisa Arai, Saitama, JP;
Norio Magome, Kawasaki, JP;
Toshifumi Minami, Yokohama, JP;
Tomoaki Hatano, Yokohama, JP;
Norihisa Arai, Saitama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device has a semiconductor substrate of a first conductivity type; first to third high-voltage insulated-gate field effect transistors formed on a principal surface of the semiconductor substrate; a first device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the second high-voltage insulated-gate field effect transistor from each other; a second device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the third high-voltage insulated-gate field effect transistor from each other; a first impurity diffusion layer of the first conductivity type that is formed below the first device isolation insulating film; and a second impurity diffusion layer of the first conductivity type that is formed below the second device isolation insulating film.