Norihisa Tsuzuki

Title: Norihisa Tsuzuki: Innovator in Semiconductor Technology

Introduction

Norihisa Tsuzuki is a prominent inventor based in Higashimurayama, Japan. He is known for his significant contributions to semiconductor technology, particularly in the selective deposition of tungsten on semiconductor substrates. His innovative methods have paved the way for advancements in the fabrication of integrated circuits.

Latest Patents

Tsuzuki holds a patent for a method of selectively depositing tungsten upon a semiconductor substrate. This method involves coating a silicon substrate with a masking film of PSG or SiO₂, which is patterned to create openings for electrode or wiring formation. Tungsten is deposited using a CVD method from a gaseous mixture of WF₆ and H₂. The process includes steps to remove unwanted tungsten nucleuses from the masking film, ensuring a flat surface for subsequent aluminum deposition. This technique enhances the accuracy and reliability of wirings, facilitating the production of VLSI of sub-micron order.

Career Highlights

Norihisa Tsuzuki has made significant strides in his career, working with Fujitsu Corporation, a leading company in technology and innovation. His work has been instrumental in advancing semiconductor manufacturing processes, contributing to the efficiency and effectiveness of electronic devices.

Collaborations

Tsuzuki has collaborated with notable colleagues, including Yoshimi Shioya and Yasushi Oyama. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of semiconductor technology.

Conclusion

Norihisa Tsuzuki's contributions to semiconductor technology through his innovative patent have had a lasting impact on the industry. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in technology.