Yokohama, Japan

Norihisa Otani

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2010-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Norihisa Otani. Retrieved from https://idiyas.com/inventor/norihisa-otani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 33.3

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 2010-2014

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3 patents (USPTO):Explore Patents

Title: Norihisa Otani: Innovator in High Frequency Technology

Introduction

Norihisa Otani is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of high frequency technology, holding a total of 3 patents. His work focuses on developing innovative solutions that enhance the performance and efficiency of high frequency switches and circuits.

Latest Patents

One of his latest patents is a high frequency switch designed to suppress deterioration in distortion characteristics. This switch includes a common port that outputs a transmission signal to an antenna, along with multiple transmission ports and switching units that manage the signal flow. Each switching unit is equipped with metal oxide semiconductor field effect transistors (MOSFETs) on a silicon substrate, ensuring effective signal management.

Another notable patent is a high frequency switching circuit that reduces the generation of harmonic signals without the need for a boost circuit. This circuit features a first switch connected to a ground and a second switch that utilizes a phase rotation element to control the output of high frequency signals. The innovative design allows for the cancellation of harmonics generated from both switches, enhancing overall signal quality.

Career Highlights

Norihisa Otani is currently employed at Samsung Electro-Mechanics Co., Ltd., where he continues to push the boundaries of high frequency technology. His work has been instrumental in advancing the capabilities of electronic devices that rely on high frequency signals.

Collaborations

Throughout his career, Otani has collaborated with notable colleagues such as Eiichiro Otobe and Tsuyoshi Sugiura. These partnerships have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Norihisa Otani's contributions to high frequency technology exemplify the spirit of innovation. His patents reflect a deep understanding of electronic systems and a commitment to improving their performance. As he continues his work at Samsung Electro-Mechanics Co., Ltd., Otani remains a key figure in the advancement of high frequency solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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