The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
Jan. 20, 2012
Tsuyoshi Sugiura, Yokohama, JP;
Eiichiro Otobe, Yokohama, JP;
Koki Tanji, Yokohama, JP;
Norihisa Otani, Yokohama, JP;
Tsuyoshi Sugiura, Yokohama, JP;
Eiichiro Otobe, Yokohama, JP;
Koki Tanji, Yokohama, JP;
Norihisa Otani, Yokohama, JP;
Samsung Electro-Mechanics Co., Ltd., Gyunggi-Do, KR;
Abstract
There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.