Ikoma, Japan

Norihiro Terada



Average Co-Inventor Count = 2.4

ph-index = 3

Forward Citations = 27(Granted Patents)


Location History:

  • Ikoma, JP (1996 - 1997)
  • Nara-ken, JP (1997)

Company Filing History:


Years Active: 1996-1997

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3 patents (USPTO):Explore Patents

Title: Norihiro Terada: Innovator in Semiconductor Technology

Introduction

Norihiro Terada is a prominent inventor based in Ikoma, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of innovative materials and devices. With a total of 3 patents to his name, Terada's work has had a notable impact on the industry.

Latest Patents

Terada's latest patents include advancements in amorphous silicon carbide films and photovoltaic devices. One of his inventions focuses on the optical band gap Eg (eV) of an amorphous silicon carbide film, which has a specific relationship with the content of hydrogen and carbon in the film. Another significant patent involves a semiconductor device with a heterojunction, where atoms are implanted into the surface of a crystalline silicon semiconductor to create an amorphous layer, facilitating the formation of a heterojunction interface.

Career Highlights

Norihiro Terada is associated with Sanyo Electric Co., Ltd., where he has been instrumental in driving research and development efforts. His expertise in semiconductor materials has positioned him as a key figure in the advancement of photovoltaic technologies.

Collaborations

Throughout his career, Terada has collaborated with notable colleagues, including Keiichi Sano and Yoichiro Aya. These partnerships have fostered innovation and contributed to the successful development of his patented technologies.

Conclusion

Norihiro Terada's contributions to semiconductor technology and his innovative patents highlight his role as a leading inventor in the field. His work continues to influence advancements in photovoltaic devices and materials.

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