The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 1997
Filed:
Aug. 29, 1995
Applicant:
Inventors:
Norihiro Terada, Nara-ken, JP;
Yasuki Harada, Hyogo-ken, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka-fu, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257458 ; 257656 ; 257 52 ; 257 53 ; 136258 ;
Abstract
In the present invention, atoms are implanted into the surface of at least a crystalline silicon semiconductor of one conductivity type in forming a heterojunction, thereby to bring the surface of the crystalline silicon semiconductor into amorphous to form a substantially intrinsic amorphous silicon layer. An amorphous silicon layer or a microcrystalline silicon layer of an opposite conductivity type is deposited on the amorphous silicon layer, whereby a heterojunction interface is formed in a region deeper than a deposition interface.