Karlsruhe, Germany

Norbert Braunagel


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 35(Granted Patents)


Company Filing History:


Years Active: 1988

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1 patent (USPTO):Explore Patents

Title: **Norbert Braunagel: A Pioneer in Gallium Nitride Film Deposition**

Introduction

Norbert Braunagel is a distinguished inventor based in Karlsruhe, Germany. He has made significant contributions to the field of materials science, particularly in the development of techniques related to semiconductor manufacturing. With a focus on innovation in vapor phase deposition processes, his work has implications for various applications in electronics.

Latest Patents

Norbert Braunagel holds a notable patent entitled "Method for Vapor Phase Deposition of Gallium Nitride Film." This invention outlines a process for depositing a high-quality gallium nitride film onto a substrate. The patent details the use of a source compound characterized by a specific formula, showcasing Braunagel's expertise in advancing semiconductor technologies that are vital for modern electronic devices.

Career Highlights

Throughout his career, Braunagel has been associated with Morton Thiokol Inc., where he has contributed to research and development efforts in materials science. His work in this company has enabled advancements in the efficiency and effectiveness of vapor phase deposition techniques, establishing him as an important figure in the industry.

Collaborations

During his innovative journey, Norbert has collaborated with several professionals, including his coworker Andreas A. Melas. This collaboration reflects a commitment to teamwork in scientific research, further enhancing the development of their projects and patents.

Conclusion

Norbert Braunagel's impact in the realm of gallium nitride film deposition is both commendable and influential. His patent and ongoing work at Morton Thiokol Inc. highlight the importance of innovation in the semiconductor industry. As technology continues to advance, Braunagel's contributions will remain significant in paving the way for future breakthroughs.

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