Noel Hoillien

Title: **Innovator Spotlight: Noel Hoillien**

Introduction

Noel Hoillien is a notable inventor based in Minneapolis, Minnesota. With a keen focus on advancements in semiconductor technology, he has made significant contributions to the field, particularly with his innovative approach to controlling electric field profiles in LDMOS devices.

Latest Patents

Hoillien holds one patent for his invention titled "LDMOS Transistor with Lightly-Doped Annular RESURF Periphery." This patent encompasses apparatus and methods that pertain to the optimization of electric field profiles within the drift region of an LDMOS device. The design involves two RESURF regions where the first extends from the source end towards the drain end, creating a junction with the drift region. The second RESURF layer serves a complementary function, improving the device's efficiency by reducing maximum electric fields within its structure.

Career Highlights

Noel Hoillien is currently employed at Polar Semiconductor, Inc., where he plays a vital role in semiconductor research and development. His innovative methods contribute to enhancing the performance and reliability of electronic devices, showcasing his deep understanding of semiconductor physics.

Collaborations

Throughout his career, Hoillien has collaborated with esteemed colleagues such as Thomas S. Chung and Peter Nicholas Manos. Together, they have worked on various projects that leverage their combined expertise in electrical engineering and semiconductor technology.

Conclusion

In conclusion, Noel Hoillien's contributions to the semiconductor industry through his innovative patent are noteworthy. His work at Polar Semiconductor, Inc. and collaborations with industry professionals highlight his commitment to advancing technology, thereby making a lasting impact in the field of electronics.