Kanagawa, Japan

Nobuyori Tsuzuki

This inventor holds 2 USPTO granted patents. Top assignee: Nippon Telegraph and Telephone Corporation. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuyori Tsuzuki. Retrieved from https://idiyas.com/inventor/nobuyori-tsuzuki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 32(Granted Patents)


Company Filing History:


Years Active: 1989

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2 patents (USPTO):Explore Patents

Title: Nobuyori Tsuzuki: Innovator in Epitaxial Growth Methods

Introduction

Nobuyori Tsuzuki is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in epitaxial growth methods. With a total of 2 patents to his name, Tsuzuki's work has advanced the understanding and application of compound semiconductors.

Latest Patents

Tsuzuki's latest patents include innovative methods for epitaxial growth. The first patent, titled "Epitaxial growth method and apparatus therefor," describes a process where a first gas, consisting of a hydrogen diluted gas containing a Group V element, is continuously flowed onto a monocrystalline substrate. This substrate is placed in a reaction chamber and arranged in a gas mixing region where it interacts with a second gas containing a halogenide of a Group III element. This method facilitates the growth of a Group III-V compound semiconductor on the substrate.

The second patent, "Method for halide VPE of III-V compound semiconductors," outlines a similar epitaxial growth method. It emphasizes the continuous flow of a hydrogen diluted gas containing a Group V element onto a monocrystalline substrate, which is also positioned in a gas mixing region. This innovative approach further enhances the growth of Group III-V compound semiconductors.

Career Highlights

Nobuyori Tsuzuki is associated with Nippon Telegraph and Telephone Corporation, where he has been instrumental in advancing semiconductor technologies. His expertise in epitaxial growth methods has positioned him as a key figure in the field.

Collaborations

Throughout his career, Tsuzuki has collaborated with notable colleagues, including Hidefumi Mori and Mitsuo Yamamoto. These collaborations have contributed to the development of innovative technologies in the semiconductor industry.

Conclusion

Nobuyori Tsuzuki's contributions to epitaxial growth methods have significantly impacted the semiconductor field. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing. Tsuzuki continues to be a vital player in advancing technology in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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