The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 1989
Filed:
Sep. 01, 1987
Applicant:
Inventors:
Assignee:
Nippon Telegraph & Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118729 ; 118715 ;
Abstract
In an epitaxial growth method of this invention, a first gas consisting of a hydrogen diluted gas containing a Group V element is continuously flowed on a monocrystalline substrate that is placed in a reaction chamber, the monocrystalline substrate is arranged in a gas mixing region where the first gas and a second gas containing a halogenide of a Group III element are mixed adjacent to the monocrystalline substrate, and a Group III-V compound semiconductor is grown on the monocrystalline substrate.