Hidefumi Mori

Title: The Innovations of Hidefumi Mori

Introduction

Hidefumi Mori is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of optical semiconductor devices. With a total of 8 patents to his name, Mori's work has advanced the technology used in various electronic applications.

Latest Patents

One of Mori's latest patents is for an optical semiconductor device and method of fabricating the same. This innovative device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate, while the semiconductor region opposes and surrounds the optical semiconductor element to form walls. The buried layer is strategically arranged between the walls of the semiconductor region and the optical semiconductor element, and it is formed by vapor phase epitaxy. Notably, in this optical semiconductor device, the distance between the wall of the semiconductor region and the side wall of the optical semiconductor element is larger in areas where the growth rate of the vapor phase epitaxy in a horizontal direction is higher.

Career Highlights

Throughout his career, Hidefumi Mori has worked with notable organizations, including Nippon Telegraph and Telephone Corporation and Nippon Telegraph and Telephone Public Corporation. His experience in these companies has allowed him to refine his skills and contribute to groundbreaking innovations in the field of optical semiconductors.

Collaborations

Mori has collaborated with esteemed colleagues such as Fumihiko Kobayashi and Jun-ichi Nakano. These partnerships have fostered a creative environment that has led to the development of advanced technologies.

Conclusion

Hidefumi Mori's contributions to the field of optical semiconductor devices highlight his innovative spirit and dedication to advancing technology. His patents and collaborations reflect a commitment to excellence in the realm of inventions.