Company Filing History:
Years Active: 2007
Title: Nobuo Katuoka: Innovator in Silicon Crystal Manufacturing
Introduction
Nobuo Katuoka is a prominent inventor based in Fukushima, Japan. He is known for his significant contributions to the field of semiconductor manufacturing, particularly in the production of silicon single crystals. His innovative methods have advanced the technology used in various electronic applications.
Latest Patents
Katuoka holds a patent for a "Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer." This invention outlines a method of producing silicon single crystals using the Czochralski method without the need for the Dash Necking method. The process maintains a temperature variation at the surface of the silicon melt to within ±5°C during critical phases of crystal growth. This technique enhances the success rate of producing dislocation-free single crystals and allows for the growth of large-diameter silicon single crystals exceeding 200 mm.
Career Highlights
Katuoka is associated with Shin-Etsu Handotai Co., Ltd., a leading company in the semiconductor industry. His work has been instrumental in improving the quality and efficiency of silicon crystal production, which is vital for the electronics sector. His innovative approach has positioned him as a key figure in the advancement of semiconductor technology.
Collaborations
Katuoka has collaborated with notable colleagues, including Izumi Fusegawa and Sadayuki Okuni. Their combined expertise has contributed to the successful development of advanced manufacturing techniques in the semiconductor field.
Conclusion
Nobuo Katuoka's contributions to the manufacturing of silicon single crystals have made a significant impact on the semiconductor industry. His innovative methods continue to influence the production of high-quality silicon materials essential for modern electronics.