Kokubunji, Japan

Nobuo Hara

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1989.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuo Hara. Retrieved from https://idiyas.com/inventor/nobuo-hara-weuzlcb9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1989

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1 patent (USPTO):Explore Patents

Title: Nobuo Hara: Innovator in Semiconductor Technology

Introduction: Nobuo Hara is a prominent inventor based in Kokubunji, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances the reliability and performance of electronic components.

Latest Patents: Nobuo Hara holds 1 patent for a semiconductor device featuring electrodes and/or interconnections made of a refractory metal film containing silicon oxide. This invention is designed to block the penetration of ions effectively. The refractory metal film's strong adhesion with insulation films improves the overall reliability of semiconductor devices, making it suitable for use in MOS transistors.

Career Highlights: Hara has had a successful career at Hitachi, Ltd., where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also influenced the broader electronics industry.

Collaborations: Throughout his career, Nobuo Hara has collaborated with notable colleagues, including Nobuyoshi Kobayashi and Seiichi Iwata. These partnerships have fostered innovation and have been crucial in the development of new technologies.

Conclusion: Nobuo Hara's contributions to semiconductor technology exemplify the impact of innovative thinking in the electronics field. His patented inventions continue to influence the design and reliability of modern electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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