The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 1989
Filed:
May. 13, 1987
Applicant:
Inventors:
Nobuyoshi Kobayashi, Hachioji, JP;
Nobuo Hara, Kokubunji, JP;
Seiichi Iwata, Sayama, JP;
Naoki Yamamoto, Kawaguchi, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 67 ; 357 231 ;
Abstract
A semiconductor device which is provided with an electrode and/or an interconnection made of a refractory metal film containing silicon oxide is disclosed. A refractory metal film containing silicon oxide has high capability of blocking penetration of ions and is suitable for being employed as a mask for forming a source and a drain of an MOS transistor by ion-implantation and as it has strong adhesion with an insulation film improves reliability of a semiconductor device.