Location History:
- Nara, JP (2001)
- Tenri, JP (2001 - 2003)
Company Filing History:
Years Active: 2001-2003
Title: Nobuhito Ogata: Innovator in Semiconductor Technology
Introduction
Nobuhito Ogata is a prominent inventor based in Tenri, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Ogata's latest patents include innovative designs for semiconductor memory devices. One of his notable inventions is a semiconductor device that features a capacitor with a lower electrode made of iridium and iridium oxide layers. This design includes a selection transistor and an electrically conductive plug that connects the selection transistor to the capacitor. Additionally, a diffusion barrier film is integrated between the conductive plug and the capacitor's lower electrode, utilizing materials such as Ta Si N or Hf Si N. Another patent details a similar semiconductor memory device and its production method, emphasizing the importance of the lower electrode's composition.
Career Highlights
Nobuhito Ogata is currently employed at Sharp Kabushiki Kaisha Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced memory devices that are crucial for modern electronics.
Collaborations
Ogata collaborates with talented colleagues, including Masaya Nagata and Jun Kudo, who contribute to the innovative projects at Sharp. Their teamwork fosters a creative environment that leads to groundbreaking advancements in semiconductor technology.
Conclusion
Nobuhito Ogata's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of efficient and advanced electronic devices.