The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2003
Filed:
Sep. 13, 2001
Seiichi Yokoyama, Kashiwa, JP;
Shun Mitarai, Nishinomiya, JP;
Masaya Nagata, Nara, JP;
Jun Kudo, Nara, JP;
Nobuhito Ogata, Tenri, JP;
Yasuyuki Itoh, Hamamatsu, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a Ta Si N film or a Hf Si N film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO film which are sequentially formed.