Kashiwa, Japan

Seiichi Yokoyama


Average Co-Inventor Count = 5.0

ph-index = 6

Forward Citations = 103(Granted Patents)


Company Filing History:


Years Active: 1996-2003

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7 patents (USPTO):Explore Patents

Title: Seiichi Yokoyama: Innovator in Semiconductor Technology

Introduction

Seiichi Yokoyama is a prominent inventor based in Kashiwa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Yokoyama's latest patents include innovative designs for semiconductor devices that incorporate capacitors with lower electrodes made of iridium and iridium oxide layers. One of his notable inventions is a semiconductor memory device that features a capacitor formed on a substrate, which includes a lower electrode, a dielectric film, and an upper electrode. This device also integrates a selection transistor and an electrically conductive plug that provides electrical connection between the selection transistor and the capacitor. Additionally, a diffusion barrier film is strategically placed between the electrically conductive plug and the lower electrode of the capacitor. This film can be a Ta Si N film or a Hf Si N film, with specific compositional parameters. The lower electrode is constructed from an Ir film and an IrO film that are sequentially formed.

Career Highlights

Seiichi Yokoyama is currently employed at Sharp Kabushiki Kaisha Corporation, where he continues to push the boundaries of semiconductor technology. His expertise and innovative approach have positioned him as a key figure in the industry.

Collaborations

Yokoyama has collaborated with notable colleagues, including Yasuyuki Ito and Jun Kudo, to further advance semiconductor research and development.

Conclusion

Seiichi Yokoyama's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the development of advanced semiconductor devices.

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