Tokyo, Japan

Nobuhiro Oshita

This inventor holds 1 USPTO granted patent. Top assignee: Rasa Industries, Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuhiro Oshita. Retrieved from https://idiyas.com/inventor/nobuhiro-oshita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Nobuhiro Oshita: Semiconductor Etching Innovation.

Introduction

Nobuhiro Oshita is an inventor associated with Rasa Industries, Ltd. in Tokyo, Japan. His work includes a patent for an etching solution composition designed for semiconductor manufacturing.

Latest Patents

Oshita is credited with 1 patent, titled “Etching Solution Composition.” The invention concerns an inorganic acid-based solution for selectively removing silicon nitride from semiconductor materials that also contain silicon oxide. It combines an etch inhibitor to reduce the etching of silicon oxide with a deposition inhibitor to limit silica buildup on the silicon oxide surface. The composition is intended to support higher silicon nitride etch selectivity while reducing silica deposition.

Career Highlights

Oshita’s listed patent reflects work on chemical processes relevant to semiconductor fabrication. His company affiliation is Rasa Industries, Ltd., based in Japan.

Collaborations

Sho Nagao is identified as Oshita’s coworker. The available information does not specify their roles or describe a particular joint project.

Conclusion

Nobuhiro Oshita’s patent addresses a semiconductor etching challenge by combining selective silicon nitride removal with measures to reduce silica deposition.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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