The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2026

Filed:

Mar. 30, 2022
Applicant:

Rasa Industries, Ltd., Tokyo, JP;

Inventors:

Sho Nagao, Tokyo, JP;

Tomohiro Inoue, Tokyo, JP;

Takao Mitsui, Tokyo, JP;

Nobuhiro Oshita, Tokyo, JP;

Reiji Uchida, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09K 13/06 (2006.01); C09K 13/00 (2006.01); C09K 13/04 (2006.01); H10P 50/00 (2026.01); H10P 50/28 (2026.01); H10P 50/64 (2026.01); H10P 50/66 (2026.01);
U.S. Cl.
CPC ...
C09K 13/06 (2013.01); C09K 13/00 (2013.01); C09K 13/04 (2013.01); H10P 50/00 (2026.01); H10P 50/28 (2026.01); H10P 50/282 (2026.01); H10P 50/283 (2026.01); H10P 50/642 (2026.01); H10P 50/667 (2026.01); H10P 50/691 (2026.01);
Abstract

Provided is an etching solution composition that can have both a higher etch selectivity of silicon nitride and a reduction in the deposition of silica on the surface of silicon oxide. An inorganic acid-based etching solution composition for selectively etching away silicon nitride from a semiconductor containing silicon nitride and silicon oxide, the etching solution composition comprising: (a) an etch inhibitor that reduces etching of silicon oxide; and (b) a deposition inhibitor that reduces deposition of silica on a surface of silicon oxide.


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