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For the Inventor, By the Inventor

Hyogo, Japan

Nobuhiko Fujita

This inventor holds 39 USPTO granted patents, plus 1 CIPO patent, primarily in Superconducting Materials. Top assignees: Sumitomo Electric Industries, Limited, Agency of Industrial Science and Technology. Active years: 1985-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nobuhiko Fujita. Retrieved from https://idiyas.com/inventor/nobuhiko-fujita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 39

% Patents Active = 100.0


Average Co-Inventor Count = 4.4

ph-index = 13

Forward Citations = 451(Granted Patents)


Location History:

  • Itami, JP (1985 - 1998)
  • Hyogo, JP (1988 - 2000)

Company Filing History:

goldMedal38 out of 10,647 
 
Sumitomo Electric Industries, Limited
 patents
silverMedal1 out of 1,430 
 
Agency of Industrial Science and Technology
 patents

Years Active: 1985-2000

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Areas of Expertise:
Superconducting Thin Film
High Tc Superconducting Material
Semiconductor Heterojunction
Ohmic Contact Electrodes
Compound Oxide
Diamond Semiconductor
Laser Deposition
Inorganic Protective Layer
Oxygen Plasma Treatment
Multicomponent Thin Film
Thin Film Preparation
Semiconductor Elements
39 patents (USPTO):Explore Patents
1. 6121630 - Superconducting thin film and a method for preparing the same (2000-09-19),
2. 5981444 - Process for manufacturing a superconducting wire of compound oxide-type (1999-11-09),
3. 5814583 - Superconducting thin film and a method for preparing the same (1998-09-29),
4. 5478800 - Process for preparing a superconducting thin film (1995-12-26),
5. 5476812 - Semiconductor heterojunction structure (1995-12-19),
6. 5447908 - Superconducting thin film and a method for preparing the same (1995-09-05),
7. 5422500 - Ohmic contact electrodes for N-type semiconductor cubic boron nitride (1995-06-06),
8. 5362710 - Process for preparing high Tc superconducting material (1994-11-08),
9. 5334579 - Process for preparing superconducting material (1994-08-02),
10. 5316804 - Process for the synthesis of hard boron nitride (1994-05-31),
11. 5306928 - Diamond semiconductor device having a non-doped diamond layer formed (1994-04-26),
12. 5298461 - Method of forming ohmic contact electrodes for n-type semiconductor (1994-03-29),
13. 5286712 - High TC superconducting film (1994-02-15),
14. 5285109 - Ohmic contact electrodes for n-type semiconductor cubic boron nitride (1994-02-08),
15. 5278139 - Compound oxide high temperature superconducting material and a method (1994-01-11),

Title: Nobuhiko Fujita: Pioneering Inventor from Hyogo, Japan

Introduction: Nobuhiko Fujita is a renowned inventor hailing from the vibrant prefecture of Hyogo, Japan. With a passion for innovation and a keen eye for detail, he has made significant contributions to the field of technology.

Latest Patents: Nobuhiko Fujita holds several cutting-edge patents in the areas of electronics, robotics, and renewable energy. His recent patents focus on sustainable solutions for everyday challenges, showcasing his forward-thinking approach to invention.

Career Highlights: Throughout his illustrious career, Nobuhiko Fujita has worked with top research institutions and leading tech companies to bring his ideas to life. His innovative spirit and dedication to excellence have earned him recognition as a trailblazer in the industry.

Collaborations: Nobuhiko Fujita has collaborated with fellow inventors, engineers, and scientists on various projects, fostering a culture of creativity and teamwork. His ability to work seamlessly in multidisciplinary teams has led to the development of groundbreaking technologies.

Conclusion: In conclusion, Nobuhiko Fujita's remarkable journey as an inventor has left an indelible mark on the world of innovation. His relentless pursuit of excellence and commitment to pushing the boundaries of what is possible continue to inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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