The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1995
Filed:
Nov. 28, 1994
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A process for preparing a superconducting thin film of K.sub.2 NiF.sub.4 -type oxides such as [La, Ba ].sub.2 CuO.sub.4, or [La, Sr ].sub.2 CuO having higher transition temperature of superconductivity which can be used for Josephson Junctions devices or the like by sputtering technique. The process of the present invention is characterized in that the target used in the sputtering technique is composed of a mixture of compounds which .contain at least La, one element M selected from a group of Ia, IIa and IIIa elements of the Periodic Table, and Cu. The compounds may be oxides, carbonates, nitrate or sulfates of La, said element M, and Cu. Said mixture which is used as the target is preferably sintered into a form of a sintered body. The substrate on which the thin film is deposited is preferably heated at a temperature between 100 and 1,200.degree. C. during sputtering and the deposited thin film is preferably heat-treated at a temperature between 600.degree. and 1,200.degree. C. after the sputtering is completed.