Tokyo, Japan

Nobuaki Hata


Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2023-2024

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2 patents (USPTO):Explore Patents

Title: Nobuaki Hata: Innovator in Memory Interface Technologies

Introduction

Nobuaki Hata is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of memory interface technologies. With a focus on enhancing memory device operations, Hata has been awarded a total of 2 patents for his innovative methods and systems.

Latest Patents

Hata's latest patents include groundbreaking advancements in memory access operations. One of his patents describes methods, devices, and systems for including alternate memory access operations over a memory interface. This method allows a memory device to switch between a default mode and an alternate management mode, enabling more efficient command processing. Another patent focuses on a circuit and method for reading Error Correction Code (ECC) from memory. This method enhances data retrieval by allowing the selection of data from both a data memory portion and an ECC memory portion, improving overall memory reliability.

Career Highlights

Nobuaki Hata is currently employed at Infineon Technologies LLC, where he continues to develop innovative solutions in memory technology. His work has positioned him as a key player in the advancement of memory interface systems. Hata's expertise in this area has led to significant improvements in the performance and reliability of memory devices.

Collaborations

Hata collaborates with notable colleagues, including Clifford Alan Zitlaw and Yuichi Ise. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies in the field of memory interfaces.

Conclusion

Nobuaki Hata's contributions to memory interface technologies demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of memory systems and their operational efficiencies. Hata's work continues to influence the future of memory technology, making him a significant figure in the industry.

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