This inventor holds 2 USPTO granted patents. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1988-1991.
Company Filing History:
Years Active: 1988-1991
Title: Nobuaki Ando: Innovator in Non-Volatile Semiconductor Memory Technology
Introduction
Nobuaki Ando is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor memory technology. With a total of 2 patents, Ando's work focuses on enhancing the functionality and efficiency of non-volatile memory devices.
Latest Patents
Ando's latest patents include a non-volatile semiconductor memory device that features a unique structure for storing data. This device incorporates a MOS transistor of double gate construction, which includes a floating gate structure with electrically separated first and second segmented floating gates. The innovative design allows for independent electron injection into these segmented floating gates, enabling data storage in three distinct non-volatile levels. Another notable patent is for a testable variable-threshold non-volatile semiconductor memory. This technology applies a potential between selection and non-selection levels to the gates, measuring the resultant drain current to identify any abnormal threshold voltage in the transistors.
Career Highlights
Nobuaki Ando is currently employed at Mitsubishi Electric Corporation, where he continues to develop cutting-edge technologies in semiconductor memory. His work has been instrumental in advancing the capabilities of non-volatile memory devices, making them more efficient and reliable.
Collaborations
Ando collaborates with talented colleagues, including Kenji Kohda and Tsuyoshi Toyama. Their combined expertise contributes to the innovative projects at Mitsubishi Electric Corporation.
Conclusion
Nobuaki Ando's contributions to non-volatile semiconductor memory technology highlight his role as a leading inventor in the field. His patents reflect a commitment to innovation and excellence in technology development.