Sacramento, CA, United States of America

Noah Mebane

USPTO Granted Patents = 1 

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations by Noah Mebane in Non-Volatile Memory Technology

Introduction

Noah Mebane is an accomplished inventor based in Sacramento, CA. He has made significant contributions to the field of non-volatile memory technology. His innovative approach focuses on reducing read latency in partially-programmed blocks of memory.

Latest Patents

Noah holds a patent titled "Read latency reduction for partially-programmed block of non-volatile memory." This patent addresses the challenge of read latency by proactively adjusting read voltages at the system level. By doing so, it significantly reduces the re-read trigger rate, which in turn minimizes the time spent in read recovery flows. The invention determines a wordline-specific pattern of offsets associated with past unsuccessful reads, allowing for adjustments to be made for vulnerable wordlines. This proactive approach enhances the efficiency of subsequent read operations.

Career Highlights

Noah Mebane is currently employed at Intel NDTM US LLC, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of non-volatile memory systems. With a focus on practical solutions, Noah has demonstrated a commitment to improving technology for various applications.

Collaborations

Noah collaborates with talented individuals such as Joseph F Doller and Kristopher H Gaewsky. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in their field.

Conclusion

Noah Mebane's contributions to non-volatile memory technology exemplify the impact of innovative thinking in the tech industry. His patent on read latency reduction showcases his ability to address complex challenges effectively. Through his work at Intel NDTM US LLC, Noah continues to push the boundaries of what is possible in memory technology.

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