This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Lam Research Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Innovations by Inventor Nishat Hasan
Introduction
Nishat Hasan is an accomplished inventor based in Portland, OR (US). He has made significant contributions to the field of substrate processing, particularly through his innovative patent related to core removal techniques.
Latest Patents
Nishat Hasan holds a patent for "Core removal - Methods, apparatus, and systems are provided herein for processing a substrate." This patent involves Spacer-on-Spacer (SoS) Self-Aligned Quadruple Patterning (SAQP) techniques. The disclosed techniques provide a novel process flow that reduces defects by ensuring that cores are not removed from the substrate until the substrate is transferred to a deposition chamber used to deposit a second spacer layer. This approach minimizes the risk of structural damage to features on the substrate during transfer or cleaning, a common issue when cores are removed prematurely.
Career Highlights
Nishat Hasan is currently employed at Lam Research Corporation, where he continues to develop and refine innovative technologies in substrate processing. His work has been instrumental in advancing the efficiency and reliability of semiconductor manufacturing processes.
Collaborations
Nishat collaborates with talented professionals in his field, including Seongjun Heo and Srividya Revuru, who contribute to the innovative environment at Lam Research Corporation.
Conclusion
Nishat Hasan's contributions to substrate processing through his innovative patent demonstrate his commitment to advancing technology in the semiconductor industry. His work not only enhances manufacturing processes but also sets a standard for future innovations in the field.