Company Filing History:
Years Active: 2024
Title: Innovations of Nirjhar Bhattacharjee in Spintronics
Introduction
Nirjhar Bhattacharjee is an accomplished inventor based in Cambridge, MA (US). He has made significant contributions to the field of spintronics, particularly through his innovative patents. With a total of 2 patents, his work focuses on the development of energy-efficient materials for advanced electronic devices.
Latest Patents
Nirjhar's latest patents include groundbreaking technologies that utilize topological insulators and normal metal bilayers. The first patent describes a thin film heterostructure of a topological insulator (TI) with a normal metal (NM) as a highly energy-efficient spin Hall Material (SHM). This innovative structure is compatible with complementary metal oxide (CMOS) processes, allowing for large-area TI films suitable for wafer-level device fabrication. The second patent outlines a sputter growth method for crystalline ordered TI materials on amorphous substrates, which can be integrated into CMOS fabrication processes for Spin Orbit Torque (SOT) devices. This method enables the creation of materials that can switch magnetic states in memory devices, showcasing the potential for advanced applications in spintronics.
Career Highlights
Nirjhar Bhattacharjee is currently affiliated with Northeastern University, where he continues to push the boundaries of research in spintronics. His work has garnered attention for its innovative approach to material science and its implications for future technologies.
Collaborations
Nirjhar collaborates with Nian Xiang Sun, contributing to the advancement of research in their field. Their partnership exemplifies the importance of teamwork in driving innovation.
Conclusion
Nirjhar Bhattacharjee's contributions to the field of spintronics through his patents highlight his role as a leading inventor. His work not only advances scientific understanding but also paves the way for future technological innovations.