Northeastern University

Nirjhar Bhattacharjee

Nian Xiang Sun

A thin film heterostructure of a topological insulator (TI) with a normal metal (NM) is used as a highly energy efficient and low power dissipation spin Hall Material (SHM). The TI material is sputter deposited onto a substrate and cooled in high vacuum, and an NM material is sputter deposited onto the TI film. The structure and method is compatible with complementary metal oxide (CMOS) processes, and with growth of large-area TI films for wafer-level device fabrication.

Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same

A sputter growth method for a crystalline ordered topological insulator (TI) material on an amorphous substrate, which is possible to use at a CMOS-compatible temperature. The process can be integrated into CMOS fabrication processes for Spin Orbit Torque (SOT) devices. The resulting material can include a thin film crystalline ordered TI layer, sputter deposited on an amorphous substrate, and an adjacent ferromagnetic (FM) layer in which spin-orbit torque is provided by the TI layer, for example to cause switching in magnetic states in a magnetic memory device.

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Cambridge, MA, United States of America

Nirjhar Bhattacharjee