The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2024
Filed:
Dec. 02, 2021
Applicant:
Northeastern University, Boston, MA (US);
Inventors:
Nian-Xiang Sun, Winchester, MA (US);
Nirjhar Bhattacharjee, Cambridge, MA (US);
Assignee:
Northeastern University, Boston, MA (US);
Primary Examiner:
Int. Cl.
CPC ...
H10N 52/00 (2023.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 52/101 (2023.02); G11C 11/161 (2013.01); G11C 11/18 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02);
Abstract
A thin film heterostructure of a topological insulator (TI) with a normal metal (NM) is used as a highly energy efficient and low power dissipation spin Hall Material (SHM). The TI material is sputter deposited onto a substrate and cooled in high vacuum, and an NM material is sputter deposited onto the TI film. The structure and method is compatible with complementary metal oxide (CMOS) processes, and with growth of large-area TI films for wafer-level device fabrication.