logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12178140 B1

PDFFull Text
Date of Patent:
Dec. 24, 2024

Filed:

Dec. 02, 2021

Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same

Applicant:

Northeastern University, Boston, MA (US);

Inventors:

Nian-Xiang Sun, Winchester, MA (US);

Nirjhar Bhattacharjee, Cambridge, MA (US);

Assignee:

Northeastern University, Boston, MA (US);

Attorney:

Hamilton, Brook, Smith & Reynolds, P.C.

Primary Examiner:

Kevin M Bernatz

Int. Cl.
CPC ...
H10N 52/00 (2023.01); G11C 11/16 (2006.01); G11C 11/18 (2006.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01); H10N 52/01 (2023.01); H10N 52/80 (2023.01);
U.S. Cl.
CPC ...
H10N 52/101 (2023.02); G11C 11/161 (2013.01); G11C 11/18 (2013.01); H10N 50/80 (2023.02); H10N 50/85 (2023.02); H10N 52/01 (2023.02); H10N 52/80 (2023.02);
Abstract

A thin film heterostructure of a topological insulator (TI) with a normal metal (NM) is used as a highly energy efficient and low power dissipation spin Hall Material (SHM). The TI material is sputter deposited onto a substrate and cooled in high vacuum, and an NM material is sputter deposited onto the TI film. The structure and method is compatible with complementary metal oxide (CMOS) processes, and with growth of large-area TI films for wafer-level device fabrication.

Find Patent Forward Citations

Sun, Nian-Xiang. (2024). Topological insulator/normal metal bilayers as spin hall materials for spin orbit torque devices, and methods of fabrication of same (U.S. Patent No. 12178140). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12178140

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…