Berkeley, CA, United States of America

Nipun Misra

This inventor holds 1 USPTO granted patent. Top assignees: Nanosys, Inc., University of California. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nipun Misra. Retrieved from https://idiyas.com/inventor/nipun-misra-5xtm0lpm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Nipun Misra: Semiconductor Nanowire Invention

Introduction

Nipun Misra is an inventor associated with Berkeley, California. His work includes a patented method for selectively processing semiconductor nanowires using polarized visible radiation.

Latest Patents

Misra is listed as an inventor on 1 patent, titled “Selective Processing of Semiconductor Nanowires by Polarized Visible Radiation.” The invention describes methods, systems, and apparatuses for annealing semiconductor nanowires and fabricating electrical devices. Nanowires are deposited on a substrate, connected electrically to multiple electrodes, and doped. A polarized laser beam then anneals at least part of the nanowires. When the nanowires are aligned along an axis, the beam’s polarization can be oriented parallel or perpendicular to that axis to alter how the nanowires absorb the radiation.

Career Highlights

Misra’s professional affiliations include Nanosys, Inc. and the University of California. His patent reflects work at the intersection of nanomaterials processing and electrical-device fabrication.

Collaborations

The listed collaborators include David P. Stumbo and Costas P. Grigoropoulos. Their shared work concerns techniques for processing semiconductor nanowires with polarized laser radiation.

Conclusion

Nipun Misra’s patent documents an approach to controlling nanowire annealing through laser polarization, connecting his work with advances in semiconductor materials and device fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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