The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2010
Filed:
Nov. 07, 2007
David P. Stumbo, Belmont, CA (US);
Yaoling Pan, Princeton, NJ (US);
Costas P. Grigoropoulos, Berkeley, CA (US);
Nipun Misra, Berkeley, CA (US);
David P. Stumbo, Belmont, CA (US);
Yaoling Pan, Princeton, NJ (US);
Costas P. Grigoropoulos, Berkeley, CA (US);
Nipun Misra, Berkeley, CA (US);
Nanosys, Inc., Palo Alto, CA (US);
Regents of the University of California, Oakland, CA (US);
Abstract
Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.