Ningning Zhang

Title: Ningning Zhang: Innovator in CMOS Technology

Introduction

Ningning Zhang is a prominent inventor based in Xi'an, China. She has made significant contributions to the field of semiconductor technology, particularly in the development of CMOS structures. Her innovative work has implications for improving the performance and reliability of integrated circuits.

Latest Patents

Ningning Zhang holds a patent for a CMOS structure and fabrication methods of FinFET CMOS, FD CMOS, and GAA CMOS. This patent describes a CMOS structure that includes both nMOS and pMOS components. The nMOS features a first channel region and a first gate electrode formed on a semiconductor substrate, while the pMOS includes a second channel region and a second gate electrode. Notably, both channel regions are made from semiconductor materials with the same conductivity type, and the gate electrodes are formed from conductive materials with the same work function. This innovative structure reduces the processing steps required for fabricating CMOS, thereby simplifying the process and lowering production costs.

Career Highlights

Ningning Zhang is affiliated with Xidian University, where she continues to advance her research in semiconductor technology. Her work has garnered attention for its potential to enhance the efficiency and reliability of CMOS technology.

Collaborations

Ningning has collaborated with notable colleagues, including Huiyong Hu and Liming Wang, contributing to a dynamic research environment that fosters innovation.

Conclusion

Ningning Zhang's contributions to CMOS technology exemplify her role as a leading inventor in the field. Her patented innovations not only simplify fabrication processes but also enhance the performance of integrated circuits.